Richardson Electronics to Distribute HVVi's Silicon Power Transistors
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TMCNet:  Richardson Electronics to Distribute HVVi's Silicon Power Transistors

[June 12, 2008]

Richardson Electronics to Distribute HVVi's Silicon Power Transistors

TMCnet Contributing Editor
 
Richardson Electronics (News - Alert) has signed a global distribution agreement with HVVi Semiconductors of Phoenix, Arizona, to distribute its RF power transistors, based on HVVi’s HVVFET architecture.


 
The RF power transistors in question deliver frequency bandwidth, voltage and power levels to radar and avionic applications with improved performance, reducing overall part count and enhancing cost efficiencies.


 
“With HVVi's innovative geometries, they fill a void in the avionics transponder and ground-based radar markets. Gain, efficiency, and load-pull survivability are just a few of their attributes,” said Chris Marshall, Vice President of Richardson Electronics’ Wireless and Broadband Communications Group. “HVVi’s agile design assistance is expedient and thorough. We welcome this opportunity to help our customers find alternative design solutions.”
 
Richardson Electronics, Ltd. is a global provider of engineered solutions and electronic components to the RF and wireless communications. Richardson designs discrete devices, components, and assemblies used in RF and wireless infrastructure, networks, digital broadcasting, defense, and power conversion.
 
HVVi has recently introduced its first three products based on the HVVFET architecture - the HVV1011-300, HVV1214-075 and HVV1214-025. Designed pulsed RF applications in the L-band such as IFF, TCAS, Mode-S, TACAN and ground-based radar, the three new devices leverage the inherent benefits of the HVVFET process to deliver high output power and high gain in an extremely compact package. All three transistors are designed to operate at 48V.
 
“Richardson’s experienced global technical sales force is able to accelerate the launch of our breakthrough HVVFETs to the RF power market,” said Chris Link, Director of Global Sales at HVVi. “Our HVVFET architecture offers best-in class performance and minimizes overall system size and costs. Working with Richardson, we can minimize customer design-in cycles, a critical requirement for success in major programs. This relationship will continue the Richardson tradition of introducing leading edge technology to the market.”
 
HVVi Semiconductors Inc. is a developer of silicon power transistors for radar and avionics. The company develops new power solutions based on its innovative new High Frequency, High Voltage Vertical Field Transistor (HVVFET) architecture.
 
Niladri Sekhar Nath is a contributing editor for TMCnet. To read more of Niladri’s articles, please visit his columnist page.
 

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